Epitaxy of GaN by means of a nitrogen stream activated by a high frequency electrical field discharge
✍ Scribed by G. Głowacki; Dr. R. Łsappa
- Publisher
- John Wiley and Sons
- Year
- 1975
- Tongue
- English
- Weight
- 212 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Epitaxy of GaN by Means of a Nitrogen Stream Activated by a High Frequency Electrical Field Discharge Gallium nitride, as a direct wide energy bandgap semiconductor has become of considerable interest recently because of its potential for optoelectronic device applications (DINGLE, SHAKLEE, LEHENY, ZETTERSTROM, HOVEL, CUOMO; PANKOVE). With this material suitably doped it has become practically feasible to produce electroluminescence diods which can emit light in the whole visible spectral range (LOGAN, THURMOND; PANKOVE).
The most widely used method for obtaining monocrystalline layers of GaN by means of vapour phase epitaxy is the CVD method by which films of GaN a r e deposited as the result of gallium monochloride (GaCl) reaction with ammonia (NJ33) (BAN; BATIJEWSKI, HERMAN; EJDER; ILEGEMS; ISHERWOOD, WICKENDEN; MARUSKA, TIETJEN;
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