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Epitaxy of GaN by means of a nitrogen stream activated by a high frequency electrical field discharge

✍ Scribed by G. Głowacki; Dr. R. Łsappa


Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
212 KB
Volume
10
Category
Article
ISSN
0232-1300

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✦ Synopsis


Epitaxy of GaN by Means of a Nitrogen Stream Activated by a High Frequency Electrical Field Discharge Gallium nitride, as a direct wide energy bandgap semiconductor has become of considerable interest recently because of its potential for optoelectronic device applications (DINGLE, SHAKLEE, LEHENY, ZETTERSTROM, HOVEL, CUOMO; PANKOVE). With this material suitably doped it has become practically feasible to produce electroluminescence diods which can emit light in the whole visible spectral range (LOGAN, THURMOND; PANKOVE).

The most widely used method for obtaining monocrystalline layers of GaN by means of vapour phase epitaxy is the CVD method by which films of GaN a r e deposited as the result of gallium monochloride (GaCl) reaction with ammonia (NJ33) (BAN; BATIJEWSKI, HERMAN; EJDER; ILEGEMS; ISHERWOOD, WICKENDEN; MARUSKA, TIETJEN;


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