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Epitaxial YBa2Cu3O7-δ on GaAs(001) using buffer layers

✍ Scribed by Fork, D. K.; Nashimoto, K.; Geballe, T. H.

Book ID
111696954
Publisher
American Institute of Physics
Year
1992
Tongue
English
Weight
639 KB
Volume
60
Category
Article
ISSN
0003-6951

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Epitaxial CeO2 buffer layers and YBa2Cu307\_~ thin films have been grown in situ on (1].02) sapphire by electron beam evaporation. Buffer layers of only 20 nm thickness inhibit interdiffusion between YBa2 Cu3 O7-6 and A12 03 as determined by depth profiling using x-ray photoelectron spectroscopy. Th