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Epitaxial tilting of GaN grown on vicinal surfaces of sapphire

✍ Scribed by Huang, X. R.; Bai, J.; Dudley, M.; Dupuis, R. D.; Chowdhury, U.


Book ID
120228982
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
527 KB
Volume
86
Category
Article
ISSN
0003-6951

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Infrared reflectance analysis of GaN epi
✍ Z.C. Feng; T.R. Yang; Y.T. Hou πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 282 KB

Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes