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Epitaxial silicon chemical vapor deposition below atmospheric pressure

โœ Scribed by J.L. Regolini; D. Bensahel; J. Mercier

Book ID
103952736
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
853 KB
Volume
4
Category
Article
ISSN
0921-5107

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โœ O. Demichel; F. Oehler; V. Calvo; P. Noรฉ; N. Pauc; P. Gentile; P. Ferret; T. Bar ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 564 KB

We have carried out photoluminescence measurements of silicon nanowires (SiNWs) obtained by the chemical vapor deposition method with a copper-catalyzed vapor-liquid-solid mechanism. The nanowires have a typical diameter of 200 nm. Spectrum of the as-grown SiNWs exhibits radiative states below the e