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Epitaxial nucleation, growth and characterization of highly oriented, (100)-textured diamond films on silicon

โœ Scribed by Fox, B.A.; Stoner, B.R.; Malta, D.M.; Ellis, P.J.; Glass, R.C.; Sivazlian, F.R.


Book ID
120882569
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
606 KB
Volume
3
Category
Article
ISSN
0925-9635

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Pulsed bias-enhanced nucleation of highly oriented diamond on (100) silicon is reported. A square waveform substrate bias was implemented in this investigation employing a pulse ON bias voltage of --250 V and a pulse OFF bias voltage of 0 V. An evaluation of the pulse ON fractions of 0.17 and 0.50 r