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Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations

✍ Scribed by J.L. Hollander; M.J. Kappers; C.J. Humphreys


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
707 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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## Aluminum nitride thin films with very smooth surfaces have been grown by gas-source molecular beam epitaxy on 4H and 6H silicon carbide substrates. High purity ammonia was used as the nitrogen source in conjunction with Al evaporated from an effusion cell. Streaked reflection high energy electr