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Epitaxial indium arsenide by vacuum evaporation

โœ Scribed by N. Godinho; A. Brunnschweiler

Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
798 KB
Volume
13
Category
Article
ISSN
0038-1101

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## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e