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Epitaxial InAs on InAs Substrates

✍ Scribed by Cronin, G. R.; Borrello, S. R.

Book ID
125544296
Publisher
The Electrochemical Society
Year
1967
Tongue
English
Weight
287 KB
Volume
114
Category
Article
ISSN
0013-4651

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We have grown InAs(Sb) quantum dots (QDs) on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two different antimony exposures (F Sb ). Atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy were carried out to investigate the dot size evolution as function of the incorpo