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Epitaxial growth of silicon in a high purity A1-22 wt% Si alloy

✍ Scribed by Liu Qiyang; Li Qingchun; Liu Qifu


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
681 KB
Volume
113
Category
Article
ISSN
0022-0248

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Bundles of single-crystalline b-Si 3 N 4 nanowires with high purity are successfully synthesized using a simple CVD process with silicon nanowire(SiNW)-assisted growth. The b-Si 3 N 4 NWs obtained have a small diameter of ∼30 nm, a single-crystalline structure with [100] or [101] direction, and a th