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Epitaxial growth of phosphorus doped diamond on {111} substrate

✍ Scribed by Casanova, N.; Tajani, A.; Gheeraert, E.; Bustarret, E.; Garrido, J.A.; Nebel, C.E.; Stutzmann, M.


Book ID
122724495
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
86 KB
Volume
11
Category
Article
ISSN
0925-9635

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## Abstract The reactive ion etching (RIE) procedures were applied for mechanically polished {111} diamond substrates surfaces using oxygen and hydrogen gas sources to improve the crystalline quality of chemical vapor deposited (CVD) n‐type diamond layers. The growth of phosphorus‐doped films was p