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Epitaxial Growth of Crystalline Polyaniline on Reduced Graphene Oxide

✍ Scribed by Dipanwita Majumdar; Moni Baskey; Shyamal K. Saha

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
606 KB
Volume
32
Category
Article
ISSN
1022-1336

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✦ Synopsis

Abstract

Due to its unique electronic properties, graphene has already been identified as a promising material for future carbon based electronics. To develop graphene technology, the fabrication of a high quality P‐N junction is a great challenge. Here, we describe a general technique to grow single crystalline polyaniline (PANI) films on graphene sheets using in situ polymerization via the oxidation‐reduction of aniline monomer and graphene oxide, respectively, to fabricate a high quality P‐N junction, which shows diode‐like behavior with a remarkably low turn‐on voltage (60 mV) and high rectification ratio (1880:1) up to a voltage of 0.2 V. The origin of these superior electronic properties is the preferential growth of a highly crystalline PANI film as well as lattice matching between the __d‐__values [∼2.48 Γ…] of graphene and {120} planes of PANI. magnified image

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