Ab initio study of epitaxial growth on s
โ
V. Milman
๐
Article
๐
1997
๐
John Wiley and Sons
๐
English
โ 172 KB
๐ 2 views
Diffusion of a Si adatom over the reconstructed Si 100 surface with a single-height step on it is studied using the pseudopotential total energy method. The S rebonded step is B shown to act as a good sink for adatoms descending onto the lower ledge. This is due to the presence of deep traps on the