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Epitaxial growth of bcc Co films on Sb-passivated GaAs(110) substrates

โœ Scribed by C.M Teodorescu; M.G Martin; N Franco; H Ascolani; J Chrost; J Avila; M.C Asensio


Book ID
108437325
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
753 KB
Volume
101-103
Category
Article
ISSN
0368-2048

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Growth and electrical properties of epit
โœ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87