We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta( 100) and ( 111) substrates have exhibited quite poor crystallinity, an ep
β¦ LIBER β¦
Epitaxial growth of AlN on single crystal Mo substrates
β Scribed by Koichiro Okamoto; Shigeru Inoue; Takayuki Nakano; Tae-Won Kim; Masaharu Oshima; Hiroshi Fujioka
- Book ID
- 108289909
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 448 KB
- Volume
- 516
- Category
- Article
- ISSN
- 0040-6090
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## Abstract We have demonstrated the first singleβcrystal growth of AlN films on Fe substrates using pulsed laser deposition and inβvestigated their structural properties. Stepped and terraced surfaces of the Fe(110) substrates have been achieved by UHV annealing. Although a low quality AlN film, w