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Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers

✍ Scribed by V. L. Alperovich; Yu. B. Bolkhovityanov; S. I. Chikichev; A. G. Paulish; A. S. Terekhov; A. S. Yaroshevich

No coin nor oath required. For personal study only.

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