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Epitaxial Growth and Surface Properties of Half-Metal NiMnSb Films

✍ Scribed by C. N. Borca; D. Ristoiu; H.-K. Jeong; Takashi Komesu; A. N. Caruso; J. Pierre; L. Ranno; J. P. Nozieres; P. A. Dowben

Publisher
John Wiley and Sons
Year
2007
Weight
11 KB
Volume
38
Category
Article
ISSN
0931-7597

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A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87