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Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition

✍ Scribed by Z.F. Liu; F.K. Shan; Y.X. Li; B.C. Shin; Y.S. Yu

Book ID: 108165580
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 182 KB
Volume: 259
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2003.07.007

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## Abstract Sn:ZnO thin films with different Sn concentrations were grown by pulsed laser deposition (PLD) onto single‐crystal Si(001) substrates at an oxygen pressure of 2 × 10^–2^ mbar and substrate temperature of 600 °C. The targets used were high density Sn:ZnO pellets with different Sn concent