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Epitaxial growth and band alignment of (GdxLa1−x)2O3 films on n-GaAs (0 0 1)

✍ Scribed by Jun-Kyu Yang; Sun Gyu Choi; Hyung-Ho Park


Book ID
108210376
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
638 KB
Volume
40
Category
Article
ISSN
0968-4328

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a b s t r a c t (1 0 0)-oriented b-FeSi 2 films were epitaxially grown on 3C-SiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the b-FeSi 2 800 diffraction peaks was 1.81. The epitaxial relationship between b-FeSi 2 and 3C-Si