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Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties

✍ Scribed by Ouerghi, A.; Marangolo, M.; Belkhou, R.; El Moussaoui, S.; Silly, M. G.; Eddrief, M.; Largeau, L.; Portail, M.; Fain, B.; Sirotti, F.


Book ID
120611887
Publisher
The American Physical Society
Year
2010
Tongue
English
Weight
448 KB
Volume
82
Category
Article
ISSN
1098-0121

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## Abstract Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we r