✦ LIBER ✦

Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties

✍ Scribed by Yamaguchi, Tomohiro; Sebald, Kathrin; Gutowski, Juergen; Figge, Stephan; Hommel, Detlef

Book ID: 115471856
Publisher: Cambridge University Press
Year: 2005
Weight: 851 KB
Volume: 892
Category: Article
ISSN: 0272-9172
DOI: 10.1557/proc-0892-ff11-01

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Study of the growth and structural prope

Study of the growth and structural properties of InMnAs dots grown on high-index surfaces by MOVPE

✍ J. Novák; J. Šoltýs; P. Eliáš; S. Hasenöhrl; I. Vávra 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 749 KB

Structural and optical properties of 3D

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

✍ Xiuxun Han; Zhen Chen; Dabing Li; Jiejun Wu; Jiemin Li; Xuehao Sun; Xianglin Liu 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 291 KB

Effect of growth kinetics on the structu

Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

✍ V.G. Dubrovskii; G.E. Cirlin; Yu.G. Musikhin; Yu.B. Samsonenko; A.A. Tonkikh; N. 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 445 KB

Effects of Carrier Gas on the Properties

Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD

✍ N. Duxbury; P. Dawson; U. Bangert; E.J. Thrush; W. van der Stricht; K. Jacobs; I 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 166 KB 👁 2 views

Influence of the TEGa flow on the optica

Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

✍ Shanjin Huang; Bingfeng Fan; Yulun Xian; Zhiyuan Zheng; Zhisheng Wu; Hao Jiang; 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 789 KB

We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photo

Optimization of the structural and optic

Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE

✍ G. Leo; N. Lovergine; P. Prete; M. Longo; R. Cingolani; A.M. Mancini; F. Romanat 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 294 KB