EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

✍ Scribed by Kawanago, T.; Yeonghun Lee; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

• Book ID: 114620793
• Publisher: IEEE
• Year: 2012
• Tongue: English
• Weight: 912 KB
• Volume: 59
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2174442