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Enhancement of weak anti-localization signatures in the magneto-resistance of bismuth anti-dot thin films

✍ Scribed by O. Rabin; K. Nielsch; M.S. Dresselhaus


Book ID
106019976
Publisher
Springer
Year
2005
Tongue
English
Weight
343 KB
Volume
82
Category
Article
ISSN
1432-0630

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Through magneto-conductance measurements, we have observed sizeable enhancement of anti-weak localization (AWL) e ect in In2O3-x thin ΓΏlm (60 nm) caused by H2 gas mixing (10%) in N2 gas (90%) atmosphere on the heat treatment (HT). In case of the HT in pure N2 gas, the AWL e ect is recognized, but is