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Enhancement of Spin–Orbit Interaction by Bandgap Engineering in InAs-Based Heterostructures

✍ Scribed by Takashi Matsuda; Kanji Yoh

Publisher
Springer US
Year
2008
Tongue
English
Weight
359 KB
Volume
37
Category
Article
ISSN
0361-5235

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Gate control of spin–orbit interaction i
Gate control of spin–orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure
✍ Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi; Takatomo Enoki 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 124 KB

We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In Ga As/In Al As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to t