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Enhancement of nucleation and growth of diamond films using In–Sn–O buffer layer on Si substrate

✍ Scribed by D.V Musale; M.P Pai; S.R Sainkar; S.T Kshirsagar

Book ID
117358679
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
741 KB
Volume
39
Category
Article
ISSN
0167-577X

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GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1± ±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality