✦ LIBER ✦

Enhancement of minority carrier lifetime in GaAs1−xPx(x=0.4; 0.65) by nitrogen implantation

✍ Scribed by M. Takai; H. Ryssel

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Nitrogen implantation in GaAs1−xPx(x=0.4

✍ M. Takai; H. Ryssel; D. Röschenthaler 📂 Article 📅 1980 🏛 Springer 🌐 English ⚖ 801 KB

Minority Carrier Lifetime Measurements b

✍ Woggon, Ulrike ;Wandel, K. ;Welnert, H. 📂 Article 📅 1984 🏛 John Wiley and Sons 🌐 English ⚖ 675 KB

Isoelectronic trap transitions in GaAs1−

✍ R.D. Dupuis; N. Holonyak Jr.; M.G. Craford; D. Finn; W.O. Groves 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 388 KB