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Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3<x<0.4)

✍ Scribed by R.D. Dupuis; N. Holonyak Jr.; M.G. Craford; D. Finn; W.O. Groves


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
388 KB
Volume
12
Category
Article
ISSN
0038-1098

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