✦ LIBER ✦

Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping

✍ Scribed by Myronov, M.; Sawano, K.; Shiraki, Y.

Book ID: 120816365
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 487 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2215633

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Enhancement of hole conductance in the G

Enhancement of hole conductance in the Ge quantum well of a SiGe heterostructure via realization of double-side modulation doping

✍ Myronov, M; Sawano, K; Shiraki, Y 📂 Article 📅 2006 🏛 Institute of Physics 🌐 English ⚖ 504 KB

Enhancement of room-temperature hole con

Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

✍ Myronov, M.; Shiraki, Y.; Mouri, T.; Itoh, K. M. 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 461 KB

Low- and high-field transport properties

Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells

✍ Madhavi, S.; Venkataraman, V.; Sturm, J. C.; Xie, Y. H. 📂 Article 📅 2000 🏛 The American Physical Society 🌐 English ⚖ 167 KB

Hole density dependence of effective mas

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

✍ Irisawa, T.; Myronov, M.; Mironov, O. A.; Parker, E. H. C.; Nakagawa, K.; Murata 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 263 KB

Observation of high mobility 2DHG with v

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

✍ M. Myronov; K. Sawano; Y. Shiraki; T. Mouri; K.M. Itoh 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 196 KB

The dependence of the carrier density an

The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric single quantum wells

✍ M Jung; T.W Kim; D.U Lee; D.C Choo; K.H Yoo; D.L Kim; M.D Kim; H Lim 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 234 KB