✦ LIBER ✦

Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP

✍ Scribed by Mahajan, A.; Arafa, M.; Fay, P.; Caneau, C.; Adesida, I.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Integration of InAlAs/InGaAs/InP enhance

✍ Mahajan, A.; Fay, P.; Arafa, M.; Adesida, I. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 85 KB

0.3-μm gate-length enhancement mode InAl

✍ Mahajan, A.; Arafa, M.; Fay, P.; Caneau, C.; Adesida, I. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 61 KB

Explanation of threshold voltage scaling

✍ A. Alexewicz; C. Ostermaier; C. Henkel; O. Bethge; J.-F. Carlin; L. Lugani; N. G 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 389 KB

[IEEE 1996 54th Annual Device Research C

✍ Mahajan, A.; Arafa, M.; Fay, P.; Caneau, C.; Adesida, I. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 172 KB