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Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

โœ Scribed by K.I Lee; J.H Lee; W.Y Lee; K.W Rhie; J.G Ha; C.S Kim; K.H Shin


Book ID
114224987
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
215 KB
Volume
239
Category
Article
ISSN
0304-8853

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Low-resistance magnetic tunneling junctions consisting of Ta/NiFe/Cu/NiFe/IrMn/CoFe/Al (6.6 and 7.7 A)-oxide/CoFe/NiFe/Ta were fabricated with the plasma-oxidized insulation layer. Electrical properties and microstructure of the junctions are characterized before and after annealing the junction at