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Enhanced performance of a -IGZO thin-film transistors by forming AZO/IGZO heterojunction source/drain contacts

✍ Scribed by Zou, Xiao; Fang, Guojia; Wan, Jiawei; Liu, Nishuang; Long, Hao; Wang, Haolin; Zhao, Xingzhong


Book ID
121462527
Publisher
Institute of Physics
Year
2011
Tongue
English
Weight
557 KB
Volume
26
Category
Article
ISSN
0268-1242

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## Abstract We demonstrate the influence of the contact resistance on the electrical properties of a‐IGZO thin‐film transistors (TFTs) with ZrO~2~ gate insulator grown by rf‐magnetron sputtering at room temperature by adopting various channel widths and lengths. These TFTs have all been processed a