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Enhanced Morphological Stability in Sb-Doped Ge

โœ Scribed by Andrew Deal; Ercan Balikci; Reza Abbaschian

Book ID
107441246
Publisher
The Minerals, Metals & Materials Society
Year
2007
Tongue
English
Weight
743 KB
Volume
38
Category
Article
ISSN
1073-5623

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Ion drift of negatively charged hydrogen was detected in Sb-doped Ge. The SbH pairs exhibit a dissociation energy of 1.36(6) eV. The dissociation energy of the dopant-ion pairs is determined by reverse bias annealing (RBA). Two different experimental techniques were applied: (1) CV-profiling of the