Hydrogen ion drift in Sb-doped Ge Schottky diodes

✍ Scribed by J. Bollmann; R. Endler; Vo Tien Dung; J. Weber

• Book ID: 103887763
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 215 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.221

✦ Synopsis

Ion drift of negatively charged hydrogen was detected in Sb-doped Ge. The SbH pairs exhibit a dissociation energy of 1.36(6) eV. The dissociation energy of the dopant-ion pairs is determined by reverse bias annealing (RBA). Two different experimental techniques were applied: (1) CV-profiling of the passivated dopant profile after each RBA step, (2) detection of the capacitance time response of a reversed biased Schottky diode during RBA. The advantage of the later technique is the simplicity of the measurement. This technique also allows measurements on a shorter timescale, which is advantageous in n-type Ge, where strong retrapping of the dissociated hydrogen occurs.