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Enhanced equilibrium concentration of donors in antimony- arsenic- or phosphorus-doped silicon on sapphire

โœ Scribed by R. Angelucci; A. Armigliato; E. Landi; B. Margesin; D. Nobili; S. Solmi

Book ID
116016911
Publisher
Elsevier Science
Year
1988
Weight
518 KB
Volume
145
Category
Article
ISSN
0022-5088

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The effect of phosphorus background conc
The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon
โœ A. Nylandsted Larsen; P.E. Andersen; P. Gaiduk; K. Kyllesbech Larsen ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 415 KB

lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :ยฐ cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional