Enhanced dielectric properties of lead barium zirconate thin films by manganese doping

✍ Scribed by Xihong Hao; Jiwei Zhai; Jing Zhou; Xiaowei Li; Xiwen Song; Shengli An

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 448 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2010.02.089

✦ Synopsis

a b s t r a c t (Pb 0.5 Ba 0.5 )ZrO 3 (PBZ) and 1 mol% Mn-doped (Pb 0.5 Ba 0.5 )ZrO 3 (Mn-PBZ) sol were successfully fabricated, and corresponding thin films were deposited on Pt(1 1 1)/TiO 2 /SiO 2 /Si(1 0 0) substrates by spin-coating method. Effects of Mn doping on the microstructure and electrical properties of PBZ thin films were investigated systemically. X-ray diffraction patterns showed that both films had a polycrystalline perovskite structure, and that the degree of (1 1 1) orientation were increased by Mn doping. Dielectric measurements illustrated that Mn-doped PBZ thin films not only had a larger dielectric constant, but also possessed a smaller dielectric loss. Accordingly, the tunability and the figure of merit of PBZ films were improved by Mn doping.