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Enhanced critical temperature in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films on silicon

โœ Scribed by Sambri, A.; Gariglio, S.; Torres Pardo, A.; Triscone, J.-M.; Stephan, O.; Reiner, J. W.; Ahn, C. H.


Book ID
115456850
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
542 KB
Volume
98
Category
Article
ISSN
0003-6951

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Influences of embossing technology on Pb
โœ Zhen-Kui Shen; Zhi-Hui Chen; Zhi-Jun Qiu; Bing-rui Lu; Jing Wan; Shao-Ren Deng; ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 456 KB

The ferroelectric random access memory (FRAM) which uses ferroelectric thin film as memory material is considered to be a candidate for the next generation memory application. In this work, we apply nanoembossing technology to fabricate Pb(Zr 0.3 ,Ti 0.7 )O 3 (PZT) ferroelectric thin film nanostruct