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Enhanced bipolar resistive switching of HfO2with a Ti interlayer

✍ Scribed by DooSung Lee; YongHun Sung; InGun Lee; JongGi Kim; Hyunchul Sohn; Dae-Hong Ko


Publisher
Springer
Year
2011
Tongue
English
Weight
743 KB
Volume
102
Category
Article
ISSN
1432-0630

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The resistive switching characteristics
✍ Kou-Chen Liu; Wen-Hsien Tzeng; Kow-Ming Chang; Yi-Chun Chan; Chun-Chih Kuo; Chun πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 613 KB

We successfully fabricated the Gd 2 O 3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd 2 O 3 /Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching