The resistive switching characteristics
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Kou-Chen Liu; Wen-Hsien Tzeng; Kow-Ming Chang; Yi-Chun Chan; Chun-Chih Kuo; Chun
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Article
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2010
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Elsevier Science
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English
β 613 KB
We successfully fabricated the Gd 2 O 3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd 2 O 3 /Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching