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Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure

✍ Scribed by J.C. Martínez-Orozco; I. Rodríguez-Vargas; M.E. Mora-Ramos; C.A. Duque

Book ID
104051353
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
150 KB
Volume
39
Category
Article
ISSN
0026-2692

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✦ Synopsis

The study of the electronic structure in GaAs-based delta-doped field effect transistors under applied hydrostatic pressure is presented. A combination of the depletion approximation and the local density Thomas-Fermi theory is used to model the potential energy profile. We present a discussion on the possible effect of the hydrostatic pressure in the formation of high conductivity channels in the system.

📜 SIMILAR VOLUMES

The nonlinear optical absorption and cor
The nonlinear optical absorption and corrections to the refractive index in a GaAs n-type delta-doped field effect transistor under hydrostatic pressure
✍ J. C. Martínez-Orozco; M. E. Mora-Ramos; C. A. Duque 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 375 KB

## Abstract The theoretical study of linear and nonlinear optical absorption, and the nonlinear corrections to the refractive index in a GaAs n‐type delta‐doped field effect transistor is preformed taking into account the effects of applied hydrostatic pressure on the quantum well energy states, th