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High energy neutron irradiation effects in GaAs modulation-doped field effect transistors (MOSFETs): threshold voltage

✍ Scribed by Krantz, R.J.; Bloss, W.L.; O'Loughlin, M.J.


Book ID
114554616
Publisher
IEEE
Year
1988
Tongue
English
Weight
508 KB
Volume
35
Category
Article
ISSN
0018-9499

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