✦ LIBER ✦

Energy spectrum of trapping centers in single crystal CdGa2Se4

✍ Scribed by V. F. Synorov; N. N. Bezryadin; A. P. Rovinskii; B. I. Sysoev

Book ID: 112428069
Publisher: Springer
Year: 1978
Tongue: English
Weight: 325 KB
Volume: 21
Category: Article
ISSN: 1573-9228
DOI: 10.1007/bf00895562

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Temperature dependence of the energy gap

Temperature dependence of the energy gaps in CdGa2Se4 and CdGa2Se4:Co2+ single crystals

✍ Chang-Dae Kim; Tong-San Cho; Wha-Tek Kim; Hong-Lee Park 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 166 KB

Phase diagram of the CdGa2Se4−Bi2Se3 sys

Phase diagram of the CdGa2Se4−Bi2Se3 system and growth of CdGa2Se4 single crystals

✍ S.M. Sosovska; O.M. Yurchenko; Y.E. Romanyuk; I.D. Olekseyuk; O.V. Parasyuk 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 241 KB

Photoconductivity spectra of CdGa2Se4:Co

Photoconductivity spectra of CdGa2Se4:Co2+ single crystals

✍ Kim, Chang-Dae; Cho, Tong-San; Kim, Jae-Kuen; Kim, Wha-Tek; Kim, Hyun-Nam 📂 Article 📅 1988 🏛 American Institute of Physics 🌐 English ⚖ 469 KB

Resonance effects in the Raman spectrum

Resonance effects in the Raman spectrum of CdGa2Se4

✍ A. Parisini; P. P. Lottici; C. Razzetti; R. Bacewicz 📂 Article 📅 1986 🏛 John Wiley and Sons 🌐 English ⚖ 344 KB

The contribution of iodine impurity to t

The contribution of iodine impurity to the formation of centers in CdGa2S4 single crystals

✍ Georgobiani, A. N. ;Gruzintsev, A. N. ;Radautsan, S. I. ;Tiginyanu, I. M. 📂 Article 📅 1983 🏛 John Wiley and Sons 🌐 English ⚖ 230 KB

Trapping of mobile Mu centers in single

Trapping of mobile Mu centers in single crystal AlN

✍ R.L. Lichti; Y.G. Celebi; K.H. Chow; B. Hitti; S.F.J. Cox 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 222 KB

We have investigated muonium (Mu) defect centers in single crystal AlN as an analog for atomic hydrogen impurities. A nitrogen-related muon level-crossing resonance is associated with a static center formed by trapping of a mobile Mu impurity at another defect. This trapped Mu is released above 800