✦ LIBER ✦

Energy loss of heavy ions specularly reflected from surfaces under glancing-angle incidence

✍ Scribed by Song, Yuan-Hong; Wang, You-Nian; Mišković, Z. L.

Book ID: 120307533
Publisher: The American Physical Society
Year: 2001
Tongue: English
Weight: 117 KB
Volume: 63
Category: Article
ISSN: 1050-2947
DOI: 10.1103/PhysRevA.63.052902

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Theoretical study of swift molecular ion

Theoretical study of swift molecular ions specularly reflected from solid surfaces under glancing angle of incidence

✍ Yuan-Hong Song; You-Nian Wang; Z.L. Mišković 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 149 KB

Energy loss of fast protons specularly r

Energy loss of fast protons specularly reflected from metal surfaces

✍ M.A. Cazalilla; J.I. Juaristi 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 124 KB

Convoy electrons produced at glancing-an

Convoy electrons produced at glancing-angle incidence of MeV heavy ions on crystal surfaces

✍ Kimura Kenji; Tsuji Masahiro; Mannami Michi-hiko 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 365 KB

Energy loss and deflection of fast ions

Energy loss and deflection of fast ions under glancing incidence upon a graphene sheet

✍ Jorge Zuloaga; Z.L. Mišković; F.O. Goodman 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 280 KB

Energy loss straggling of 0.5-MeV proton

Energy loss straggling of 0.5-MeV protons specularly reflected from a SnTe(001) surface

✍ Kenji Kimura; Hideaki Kuroda; Martin Fritz; Michi-hiko Mannami 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 485 KB

Morphology of Si surfaces sputter-eroded

Morphology of Si surfaces sputter-eroded by low-energy Xe-ions at glancing incident angle

✍ K. Zhang; H. Hofsäss; F. Rotter; M. Uhrmacher; C. Ronning; J. Krauser 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 999 KB

Sputter erosion of Si generates nanoscale ripple patterns which are stable at ambient conditions and which may serve as an experimental test of ripple formation theories. Up to now, almost all studies on ripple formation of Si-surface have been carried out with large ion-fluence (varying from 10 17