The binding energy and wave function of a ground state of a shallow hydrogenic impurity in two-dimensional semiconductors with isotropic and anisotropic effective mass of carriers __m__ ^\*^ = { __m__ ~โฅ~, __m__ ~โฅ~, __m__ ~||~ } are derived. The calculations are performed by the variational method
โฆ LIBER โฆ
Energy levels of two-dimensional anisotropic excitons
โ Scribed by J. Deppe; M. Balkanski; R.F. Wallis; K.P. Jain
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 249 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0038-1098
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