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Energy levels due to n-type δ-doping in silicon

✍ Scribed by L.M.R Scolfaro; D Beliaev; R Enderlein; J.R Leite


Book ID
103390676
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
98 KB
Volume
93
Category
Article
ISSN
0038-1098

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Nitrogen-and-boron doped Czochralski Si samples are converted into n-type by annealing at 600 • C due to formation of Shallow Thermal Donors (STDs). The temperature dependence of the electron concentration, measured by Hall effect down to the liquid Helium temperature, is not however consistent with