✦ LIBER ✦

Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide

✍ Scribed by Alfieri, G.; Monakhov, E. V.; Svensson, B. G.; Hallén, A.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-resistance layers in n-type 4H-sili

✍ Nadella, Ravi K.; Capano, M. A. 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 257 KB

Bistable defects in low-energy electron

✍ F. C. Beyer; C. G. Hemmingsson; H. Pedersen; A. Henry; J. Isoya; N. Morishita; T 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 287 KB

Deep levels in low-energy electron-irrad

✍ P. Carlsson; N.T. Son; F. C. Beyer; H. Pedersen; J. Isoya; N. Morishita; T. Ohsh 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 370 KB

Investigation of deep levels in n-type 4

✍ Danno, Katsunori; Kimoto, Tsunenobu 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 384 KB

Hydrogen-related defect centers in float

✍ P. Lévêque; P. Pellegrino; A. Hallén; B.G. Svensson; V. Privitera 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 332 KB

Energy dependence of anisotropy of defec

✍ Banbury, P. C.; Haddad, I. N. 📂 Article 📅 1966 🏛 Taylor and Francis Group 🌐 English ⚖ 403 KB