Energy effect in switching of PAR thin film as an electrical bistable material
β Scribed by Xie, Hengbo ;Jiang, Yiming ;Guo, Feng ;Wan, Xinggong ;Li, Jin
- Book ID
- 105362535
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 87 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
The binding energies of shallow hydrogenic donor impurities in GaAsΒ±(Ga,Al)As quantum boxes are calculated as a function of the size of the structure and as a function of the intensity of an applied electric field. The calculations are performed within the effective-mass approximation and using a va
The binding energy of a donor impurity in a spherical GaAsΒ±(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation