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Energy band-gap in elastic-strained heteroepitaxial layers

✍ Scribed by S. G. Konnikov; V. E. Umansky

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
340 KB
Volume
20
Category
Article
ISSN
0232-1300

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There is a significant and unexplained drop in the band-gap pressure coefficients of III-V ternary semiconductor alloys grown as strained layers compared with the bulk binary values. For example, the drop for In x Ga 1Γ€x As is about Γ°50xÞ meV/GPa. In the past, first order effects of pressure have be