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Energy-band gap and density of SiAsTe amorphous semiconductors

✍ Scribed by Masahiro Nunoshita; Hirotsugu Arai

Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
360 KB
Volume
11
Category
Article
ISSN
0038-1098

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## Abstract The title compounds are prepared in 2—5 g batches by reactions of Tl~2~Q (Q: S, Se, and Te) and HgQ in a 1:3 stoichiometry (sealed carbon‐coated tubes, 823 K, 2 d; annealing at 623 K, 3 weeks).