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ChemInform Abstract: Tl2Hg3Q4 (Q: S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors.

✍ Scribed by Simon Johnsen; Sebastian C. Peter; Sandy L. Nguyen; Jung-Hwan Song; Hosub Jin; Arthur J. Freeman; Mercouri G. Kanatzidis

Publisher: John Wiley and Sons
Year: 2011
Weight: 21 KB
Volume: 42
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.201150010

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✦ Synopsis

Abstract

The title compounds are prepared in 2—5 g batches by reactions of Tl~2~Q (Q: S, Se, and Te) and HgQ in a 1:3 stoichiometry (sealed carbon‐coated tubes, 823 K, 2 d; annealing at 623 K, 3 weeks).

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