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Empirical tight binding cluster method for semiconductor surface structures

โœ Scribed by J.N. Carter; V.M. Dwyer; B.W. Holland


Publisher
Elsevier Science
Year
1987
Weight
256 KB
Volume
188
Category
Article
ISSN
0167-2584

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The ionization potentials and cohesive energies of small Si n s 2 ; 13 clusters have been calculated using the tight n binding method based on Anderson's formalism. The matrix elements were obtained from the Slater-Koster terms using the universal parameters of Harrison. The structures of clusters w