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Semi-Empirical Tight Binding Calculations for the Energy Bands of the Diamond and Zincblende Type Semiconductors

โœ Scribed by S. N. Sahu; J. T. Borenstein; V. A. Singh; J. W. Corbett


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
392 KB
Volume
122
Category
Article
ISSN
0370-1972

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The ionization potentials and cohesive energies of small Si n s 2 ; 13 clusters have been calculated using the tight n binding method based on Anderson's formalism. The matrix elements were obtained from the Slater-Koster terms using the universal parameters of Harrison. The structures of clusters w