Emitter-length design for microwave power heterojunction bipolar transistors
✍ Scribed by William Liu
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 540 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0038-1101
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We report an impro¨ed thin-emitter InGaAsrInP heterostructure bipolar transistor where the InGaAs base layer is contacted through the thin InP emitter. The InP passi¨ation layer a¨oids the degradation of electrical characteristics obser¨ed in InGaAsrInP heterostructures after PECVD deposition. As co
## Abstract This paper describes the DC and small‐signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff a